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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2750
DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) *High Current Capability *High Power Dissipation
APPLICATIONS *Designed for high speed, high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
ww w
scs .i
UNIT 150 V 100 V 7 V 15 A 30 A 5 A
.cn mi e
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature
PC
100
W
TJ
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS)1 VCEX(SUS)2 VCE(sat) VBE(sat) ICBO ICER ICEX IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 10A; IB1= 1A; L= 100H IC= 10A; IB1= -IB= 1A; Ta= 125 L= 180H; Clamped IC= 20A; IB1= 2A; IB2= 1A; Ta= 125; L= 180H; Clamped IC= 10A; IB= 1A IC= 10A; IB= 1A VCB= 100V; IE= 0 MIN 100 150 100
2SC2750
TYP.
MAX
UNIT V V V
0.6 1.5 10 1.0 10 500 10 120
V V A
VCE= 100V; RBE= 50; Ta= 125
w w
w.
VCE= 100V;VBE(off)= -1.5V; VCE= 100V;VBE(off)= -1.5V;Ta=125 VEB= 5V; IC= 0
IC= 5A; VCE= 5V
.cn mi cse is
30 20
mA A A
IC= 10A; VCE= 5V
Switching Times Turn-on Time Storage Time Fall Time IC= 10A, IB1= -IB2= 1A, VCC 50V; RL= 5 1.0 1.5 0.3 s s s
ton tstg tf
hFE-1 Classifications M 30-60 L 40-80 K 60-120
isc Websitewww.iscsemi.cn
2


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